| TYPE | DESCRIPTION |
| Manufacturer | Toshiba |
| Part Number / MPN | MG100Q1ZS40 |
| Category | IGBTs, Power Devices |
| Condition | New |
| Collector-Emitter Voltage | 1200 V |
| Collector Current | 100 A |
| Power Dissipation | 660 W |
| Isolation Voltage | 2500 V |
-33%
IGBTs, Power Devices
MG100Q1ZS40
Availability:
5 in stock
- Manufacturer – Toshiba
- Part Number / MPN – MG100Q1ZS40
- Category – IGBTs
- Condition – New
- Technical Description – MG100Q1ZS40 Toshiba High-Power Insulated Gate Bipolar Transistor.
$100.00 $150.00
5 in stock
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